Voltage-Controlled Magnetic Devices

Technology #ua15-061

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Researchers
Chong Bi
Postdoctoral Research Associate I, Physics
Weigang Wang
Assistant Professor, Physics
Managed By
John Geikler
Asst. Director, Physical Science Licensing (520) 626-4605

Invention:

The Nobel Prize Committee in 2007 stated that, “Giant magnetoresistance (GMR) can be considered one of the first real applications of the promising field of nanotechnology.”  Nanomagnetic materials and products in general and GMR in particular still represent the most mature and widely used examples of nanotechnology and nanoscale materials.  This technology is no except to this statement. The invention demonstrates a nonvolatile control of cobalt films through voltage induced reversible oxidation. Also, the ultra-thin have a strong asymmetric behavior for electric fields with different polarities. Due some of these factors,  the magnetic anisotropy remains in the system when the electric field is turn off and becomes reversible. The characteristic of this technology can lead to many advantage to the electronic industry.             

Application: This invention have a very board scope. This technology can lead to many advances the in the fields of Magnetic Random Access Memory (MRAM), Organic Spintronics, or Quantum Computing. 

Advantages:

This invention claims to display enhanced performance in area, such as:

•       Increase Anisotropy change

•       Reversible Magnetism Control

•       Nonvolatile Magnetism control 

 

Lead Inventor:

Chong Bi, and Weigang Wang

 

UA ID:

UA15-061