Novel Design of Gain Region in Very-Short Pulse VECSELS for Growth Without Excessive Formation of DislocationsTechnology #ua16-178
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Title: Novel Design of Gain Region in Very-short Pulse VECSELs for Growth without Excessive Formation of Dislocations
Invention: The technology is a design of the gain region in a vertical-external-cavity surface-emitting laser (VECSEL) that can achieve ultra-short laser pulses depending on the placement of quantum wells on the chip, which allows for adaptation across a large range of frequencies. To prevent strain defects from appearing while still satisfying the optical gain needed in the VECSEL, this new design modifies quantum well locations relative to antinode positions.
Background: Current pulse lasers, and lasers in general, require large inputs of power in order to produce a large enough gain output. Quantum wells provide the optical gain for a light field in a VECSEL. In order to optimize for very short pulse durations, the quantum wells have a special arrangement within the antinode regions. Unfortunately, strain defects occur in such a configuration.
- high power, short pulse lasers
- laser cutting
- remote sensing
- Achieves ultra-short laser pulses with high power
- Adaptable across a large range of frequencies