Magnetic Tunnel Junctions With Voltage Tunable Interlayer Coupling for Memory and Sensor ApplicationsTechnology #ua17-021
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Title: Magnetic Tunnel Junctions with Voltage Tunable Interlayer Coupling for Memory and Sensor Applications
Invention: This invention is a new voltage controlled interlayer coupling system and device that utilizes a new perpendicular magnetic tunnel junction approach, where a large perpendicular magnetic anisotropy and a sizable tunneling magnetoresistance have been achieved at room temperature. This provides a new path toward achieving energy efficient magnetization switching by controlling interlayer coupling.
Background: Magnetic interlayer coupling, the parallel or antiparallel alignment of ferromagnetic layers in proximity to each other in the absence of external magnetic fields, is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising way to achieve low energy magnetization switching and improve device operation (switching energy) by reducing heating.
- Magnetic memory and logic devices
- Magnetic and microwave sensors (with controllable range/sensitivity)
- Room temperature operation
- Order of magnitude improvement in switching energy