Invention:
This invention presents a high-precision, scalable method for integrating quantum emitters as on-chip light sources in photonic integrated circuits (PICs) fabricated on thin-film membranes (e.g., SiN membranes). By utilizing nanopore trapping and deterministic positioning, this method enables precise placement of quantum dots (QDs), atomic defects, or other nanoscale emitters. The resulting integration enhances the coupling efficiency between emitters and waveguides, supporting coherent, directional emission suitable for high-speed optical communications and quantum photonic applications.
Background:
Photonic integrated circuits (PICs) are critical for applications in telecommunications, data centers, and quantum computing. However, a major challenge in silicon-based PICs is the lack of an efficient on-chip light source due to silicon’s indirect bandgap. Existing solutions, such as external laser coupling and hybrid integration of III-V materials, introduce fabrication complexity and scalability issues. DNA functionalization has been explored for emitter localization, but it lacks spatial precision and introduces contaminants. This invention offers a cleaner, more precise, and scalable solution by leveraging nanopore trapping for quantum emitter placement.
Applications:
- Quantum communications and cryptography
- Optical interconnects for high-performance computing and AI systems
- Fiber-optic and free-space optical communications
- Advanced sensing and metrology
Advantages:
- High Precision & Spatial Control: Enables deterministic placement of quantum emitters at nanoscale pores
- Scalable & Compatible with Existing PICs: Fabrication methods align with current semiconductor manufacturing processes, enabling large-scale deployment
- Enhanced Optical Coupling: Efficiently couples quantum emitters with on-chip waveguides and nanophotonic cavities, improving emission properties
- High-Speed Optical Communication: Supports high-bandwidth data transmission for optical interconnects
