Invention:
This invention repurposes existing metallic wires in the complementary metal-oxide semiconductor (CMOS) process to function as metal-optic antennas to strengthen the specificity and efficiency of biological photodetection imaging systems, such as two-photon absorption detectors and upconversion imaging devices. This new method avoids the incompatibility of weak laser sources and increases the focus of light on the photodetector by increasing two-photon absorption.
Background:
Traditional photodetection imaging devices rely on various nonlinear processes and supplemental technologies, such as a femtosecond laser, to initiate nonlinear imaging applications. While the integration of complementary metal-oxide semiconductors (CMOS) has fundamentally altered the operation of these photodetection devices, enhancement in specificity and efficiency within the CMOS process has been scarce due to challenges arising from size and temperature increases. The proposed technology looks to enhance the performance of nonlinear imaging systems by upgrading the absorption cross-section of photodetectors by implementing metal-optic antennas into the CMOS process.
Applications:
- Nonlinear imaging devices
- Photodetectors
- Biological imaging and microscopy that rely on nonlinear processes
Advantages:
- Ability to be implemented into most existing semiconductor manufacturing infrastructure
- Foregoes the need for significant modification to photodetector design
- Cost-effective solution
- Improved upconversion efficiency
- Enhanced overall local field intensity for increased nonlinear optical processes
