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Carbon Ion Beam Growth of Isotopically-Enriched Graphene and Isotope-Junctions
Isotopically-enriched graphene and isotope junctions are epitaxially grown on a catalyst substrate using a focused carbon ion beam technique. The focused carbon ion beam is filtered to pass substantially a single ion species including a single desired carbon isotope. The ion beam and filtering together provide a means to selectively isotopically-enrich...
Published: 6/30/2011   |   Inventor(s): J. Warren Beck, Delmar Barker, William Owens
Keywords(s): epitaxial, graphene, ion-beam, isotope heterojunction
Category(s): Technology Classifications > Materials, Technology Classifications > Materials > Nanomaterials