Energy Efficient Switching In Magnetic Tunnel Junctions With An Antiferromagnetic Barrier

Case ID:

This invention is a magnetic tunneling junction (MTJ) design to realize more efficient switching. This design includes the use of an antiferromagnetic layer.



Spintronics represents a promising solution to address the problem of greatly increased power consumption in CMOS transistors for memory and logic applications. Storing information as spin, instead of charge, spintronics offers a unique route to eliminate energy waste in the stand-by state. A large part of the present spintronics research focuses on reducing the dynamic power consumption and increasing the on/off ratio (magnetoresistance) in various structures. Magnetic tunnel junctions (MTJs) have been arguably the most important building blocks in spintronic technology.  There is a need for advanced MTJs that dramatically reduce switching energy while maintaining a reasonably high tunneling magnetoresistance and strong thermal stability at room temperature



  • Magnetic hard disk drives
  • Random access memories
  • Spin logic cell
  • Sensors
  • Microwave oscillators
  • Amplifiers



  • Energy efficient MTJ switching for spintronics computing
Patent Information:
Contact For More Information:
Jonathan Larson
Senior Licensing Manager, College of Science
The University of Arizona
Lead Inventor(s):
Shufeng Zhang
Weigang Wang
Yihong Cheng
Meng Xu
Pravin Khanal